retaining a 12v v symbol v ds v gs i dm t j , t stg symbol typ max 30 40 65 80 r q jl 20 25 junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d 12.6 10 40 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 12 gate-source voltage drain-source voltage 20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AON3402 20v n-channel mosfet product summary v ds (v) = 20v i d = 12.6a (v gs = 4.5v) r ds(on) < 13m w (v gs = 4.5v) r ds(on) < 17m w (v gs = 2.5v) r ds(on) < 26m w (v gs = 1.8v) the AON3402 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while gs(max) for use as load switch and general purpose fet application. g d s top view 1 2 3 4 8 7 6 5 general description rating.this device is suitable www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 20 v 10 t j =55c 25 i gss 10 m a bv gso 12 v v gs(th) 0.5 0.78 1 v i d(on) 40 a 10.3 13 t j =125c 14.4 18 14.3 17 m w 21.7 26 m w g fs 37 s v sd 0.73 1 v i s 4.8 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 w q g 17.9 nc q gs 1.5 nc q gd 4.7 nc t d(on) 2.5 ns t r 7.2 ns t d(off) 49 ns t f 10.8 ns t rr 20.2 ns q rr 8 nc gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =4.5v, v ds =10v, i d =12a gate source charge gate drain charge r ds(on) i s =1a,v gs =0v dynamic parameters v gs =0v, v ds =10v, f=1mhz m w v gs =2.5v, i d =10.5a maximum body-diode continuous current input capacitance output capacitance v gs =1.8v, i d =8.5a forward transconductance diode forward voltage v ds =5v, i d =12a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =v gs i d =250 m a v ds =16v, v gs =0v v ds =0v, v gs =10v m a v gs =4.5v, v ds =5v v gs =4.5v, i d =12a gate-body leakage current static drain-source on-resistance gate-source breakdown voltage v ds =0v, i g =250ua gate threshold voltage body diode reverse recovery time body diode reverse recovery charge i f =12a, di/dt=100a/ m s reverse transfer capacitance turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.0 w , r gen =3 w turn-on delaytime i f =12a, di/dt=100a/ m s switching parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2: nov. 2010 AON3402 20v n-channel mosfet www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =12a v gs =2.5v i d =10.5a 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v i d =12a v gs =1.8v i d =8.5a v gs =1.8v 25c 125c AON3402 20v n-channel mosfet www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =10v i d =12a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =80c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s AON3402 20v n-channel mosfet www.freescale.net.cn 4 / 4
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